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| 1N4448 Small Signal Diodes DO-35 min. 1.083 (27.5) FEATURES Silicon Epitaxial Planar Diode Fast switching diode. This diode is also available in other max. .079 (2.0) Cathode Mark min. 1.083 (27.5) case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation IMBD4448. max. .150 (3.8) max. .020 (0.52) MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Reverse Voltage Peak Reverse Voltage Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 C and f 50 Hz Surge Forward Current at t < 1 s and Tj = 25 C Power Dissipation at Tamb = 25 C Junction Temperature Storage Temperature Range 1) Value 75 100 1501) Unit V V mA VR V RM I0 IFSM Ptot Tj TS 500 5001) 175 -65 to +175 mA mW C C Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 4/98 1N4448 ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified Symbol Forward Voltage at IF = 5 mA at IF = 10 mA Leakage Current at VR = 20 V at VR = 75 V at VR = 20 V, Tj = 150 C Reverse Breakdown Voltage tested with 100 A Pulses Capacitance at VF = VR = 0 V Reverse Recovery Time from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Thermal Resistance Junction to Ambient Air Recification Efficiency at f = 100 MHz, VRF = 2 V 1) Min. 0.62 - - - - 100 - - Typ. - - - - - - - - Max. 0.72 1 25 5 50 - 4 4 Unit V V nA A A V pF ns VF VF IR IR IR V(BR)R Ctot trr RthJA v - 0.45 - - 3501) - K/W - Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Rectification Efficiency Measurement Circuit RATINGS AND CHARACTERISTIC CURVES 1N4448 RATINGS AND CHARACTERISTIC CURVES 1N4448 |
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